供应压力芯片KP215F1701 INFINEON霍尔元件

产品描述

kp215f1701一个小型化模拟歧管空气压力传感集成电路以一个为依据电容的原则。它是表面微机械同一个单片整合信号调理线路执行在功率因子前置稳压器技术。传感器兑换一个压力到一个类似物输出信号。校准传递函数兑换一个压力的10饱和蒸气压115饱和蒸气压到一个0。4的电压范围各变量4。65各变量。芯片被包在一个“绿色”说明档收容。传感器已经是主要地开发为测量歧管空气压力，但是可以也被使用在其他应用领域。高精度，设备的高灵敏度走完路程一个完成式适合提前汽车应用以及在产业，消费者应用。

特征

l以下的特征被支持kp215f1701:

l精度高压力传感(±1。4饱和蒸气压)

l比例模拟输出

l大温度范围(-40°c - 140°c)

l断丝发现

l“Green”8 pin SMD housing

l汽车修饰

目标应用

kp215f1701被确定使用在遵循目标应用:

l汽车应用(多样的空气压力测量)

l工业控制

l消费者应用

l医疗应用

l气象站

l高度表

功能描述

压力被检测由大量的电容的表面微机械传感器细胞。传感器细胞产量被放大，温度补偿，线性化获得一个输出电压那与成比例的外加电压。传递函数为线性化被计算在指部分传感器使用一个第三个人多项式计算。传递函数被创建从下面参数:

l最大最小额定压力

l电压水平最大最小额定压力

l钳水平

产出是类似物，比例关于电源电压。一切参数需为完整校准算法—例如抵销，获得，温度偏移与增益的系数，线性化参数—被确定在装配后。参数被保存在一个整合E²PROM。E²PROM内容被保护同前向纠错(一个一误码被检测，纠正，不止一个的错误咬被检测，输出信号被切换到大地电位)。

Clamping

输出电压被限制在内部二钳门槛水平。以这个为依据特征，开押信号发现(obd)被简化，改善。

Open Bond Detection

开押信号发现，与夹钳协力水平，缓解履行的错误和故障发现战略(e。g。为已装船诊断需求)。微控制器可以样本产出的传感器，比较它同编程过电压，欠压极限。当传感器的输出电压超过那些极限，一个断丝条件被鉴定。当芯片不是激励妥善，结型场效应管晶体管的断丝发现阶段selfconducting。例如，如果接地连接被打断，产出被吸引非常vdd。同样地，如果vdd连接被打破，产出被吸引接地。

1 Product Description

The KP215F1701 is a miniaturized Analog Manifold Air Pressure Sensor

IC based on a caPACitive principle. It is surface micromachined with a

monolithic integrated signal conditioning circuit implemented in BiCMOS

technology.

The sensor converts a pressure into an analog output signal. The

calibrated transfer function converts a pressure of 10 kPa to 115 kPa into

a voltage range of 0.4 V to 4.65 V.

The chip is packaged in a “green” SMD housing. The sensor has been

primarily developed for measuring manifold air pressure, but can also be

used in other application fields. The high accuracy and the high sensitivity

of the device makes it a perfect fit for advanced automotive applications

as well as in industrial and consumer applications.

1.1 Features

Following features are supported by the KP215F1701:

• High precision pressure sensing (±1.4 kPa)

• Ratiometric analog output

• Large temperature range (-40 °C to 140 °C)

• Broken wire detection

• Clamping

• “Green” 8 pin SMD housing

• Automotive qualified

1.2 Target Applications

The KP215F1701 is defined for use in following target applications:

• Automotive applications (manifold air pressure measurement)

• Industrial control

• Consumer applications

• Medical applications

• Weather stations

• Altimeters

2 Functional Description

The pressure is detected by an array of capacitive surface micromachined sensor cells. The sensor cell output is

amplified, temperature compensated and linearized to obtain an output voltage that is proportional to the applied

pressure.

The transfer function for linearization is computed in the digital part of the sensor using a third order polynomial

calculation. The transfer function is created from the following parameters:

• Minimum and maximum rated pressure

• Voltage level at minimum and maximum rated pressure

• Clamping levels

The output is analog and ratiometric with respect to the supply voltage.

All parameters needed for the complete calibration algorithm — such as offset, gain, temperature coefficients of

offset and gain, and linearization parameters — are determined after assembly. The parameters are stored in an

integrated E²PROM. The E²PROM content is protected with forward error correction (a one bit error is detected

and corrected, errors of more than one bit are detected and the output signal is switched to ground potential).

Clamping

The output voltage is limited internally to two clamping threshold levels. Based on this feature, the open bond

detection (OBD) is simplified and improved.

Open Bond Detection

The open bond detection, in conjunction with the clamping levels, eases the implementation of error and

malfunction detection strategies (e.g. for On-Board Diagnosis requirements). The microcontroller can sample the

output of the sensor and compare it with programmed overvoltage and undervoltage limits. When the sensor’s

output voltage exceeds those limits, a broken wire condition is identified.

When the chip is not powered properly, the JFET transistors of the broken wire detection stage are selfconducting.

For example, if the GND connection is interrupted, the output is drawn strongly to VDD. Similarly, if

the VDD connection is broken, the output is drawn to GND.